jiejie microelectronics co. , ltd tel +86 - 513 - 83639777 - 1 / 6 - http://www.jjwdz.com j st 4 1 series 40 a triac s rev. 4 .0 description: jst4 1 series triacs, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interface. with high commutation performances, 3 quadrants products especially recommended for use on inductive load. j s t 4 1z provides insulation voltage rated at 2500v rms from all three terminals to external he a tsink comply ing with ul standards (file ref: e252906). main features symbol value unit i t( rms ) 40 a v drm /v rrm 600 and 800 and 1200 and 1600 v absolute maximum ratings parameter symbol value unit storage junction temperature range t stg - 40 - 1 50 operating junction temperature range t j - 40 - 125 repetitive peak off - state voltage (t j =25 ) v drm 600/800/1200 /1600 v repetitive peak reverse voltage (t j =25 ) v rrm 600/800/1200 /1600 v non repetitive surge peak off - state voltage v dsm v drm +100 v non repetitive peak reverse voltage v rsm v r rm +100 v rms on - state current to - 3 p ( ins ) (t c = 80 ) i t( rms ) 40 a to - 2 47 / tg - c (t c =90 ) non repetitive surge peak on - state current ( full cycle, f = 50hz ) i tsm 40 0 a i 2 t value for fusing (tp= 10 ms ) i 2 t 88 0 a 2 s critical rate of rise of on - state current ( i g = 2 i gt ) di/dt 5 0 a / s t1(1) g(3) t2(2) to-3p insulated 3 1 2 to-247 1 2 3
j st 41 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 2 / 6 - http://www.jjwdz.com peak gate current i gm 4 a average gate power dissipation p g(av) 1 w peak gate power p gm 10 w electrical characteristics (t j =25 unless otherwise specified ) 3 quadrants symbol test condition quadrant value unit i gt v d =12v r l =33 gt gd v d =v drm t j =125 l =3.3k l i g = 1.2 i g t h i t = 100ma max 60 ma dv/dt v d =2/3v drm gate ope n t j = 125 / j =125 / symbol test condition quadrant value unit i gt v d =12v r l =33 - - max 50 ma 70 v gt all max 1.5 v v gd v d =v drm t j =125 r l =3.3k all min 0.2 v i l i g = 1.2 i g t - - max 90 ma 100 i h i t = 100ma max 80 ma dv/dt v d =2/3v drm gate ope n t j = 125 min 500 v / s (dv/dt)c without snubber t j =125 min 30 v / s
j st 41 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 3 / 6 - http://www.jjwdz.com static characteristics symbol parameter value(max) unit v tm i tm =60 a tp=380 s t j =25 1.5 5 v i drm v d =v d rm v r =v r rm t j =25 10 a i rrm t j = 1 25 5 ma thermal resistances symbol parameter value unit r th(j - c) junction to case(ac) to - 3p ( ins ) 0.9 /w to - 2 47 / tg - c 0.8 ordering information j s t 4 1 z - 6 0 0 b w j i e j i e m i c r o e l e c t r o n i c s c o . , l t d t r i a c s 6 0 0 : v d r m / v r r m 6 0 0 v 8 0 0 : v d r m / v r r m 8 0 0 v 1 2 0 0 : v d r m / v r r m 1 2 0 0 v 1 6 0 0 : v d r m / v r r m 1 6 0 0 v b w : i g t 3 5 0 m a b : i g t 1 - 3 5 0 m a i g t 4 7 0 m a i t ( r m s ) : 4 0 a z : t o - 3 p ( i n s ) s : t o - 2 4 7 t : t g - c
j st 41 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 4 / 6 - http://www.jjwdz.com package mechanical data 2-r0.5 h p e max 4.2mm k l b a d f g j r c dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c d e f g h j k l p r 4.40 1.45 14.35 0.50 4.60 1.55 15.60 0.70 0.173 0.057 0.565 0.020 0.181 0.061 0.614 0.028 2.70 2.90 20.40 1.10 1.40 0.043 0.055 2.80 3.00 0.110 0.118 0.106 0.114 15.80 16.50 0.622 0.650 21.10 0.803 0.831 15.10 15.50 0.594 0.610 4.35 0.171 5.40 5.65 0.213 0.222 1.35 1.50 0.053 0.059 to-3p ins
j st 41 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 5 / 6 - http://www.jjwdz.com package mechanical data marking
jst 4 1 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 6 / 6 - http://www.jjwdz.com information furnished in this document is believed to be accurate and reliable . however, jiangsu jiejie microelectronics co.,ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, jiangsu jiejie complies with the agreement. products and information provided in this document have no infringement of patents. jiangsu jiejie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. this document is the fourth version which is made in 9 - june - 201 5 . this document supersedes and replaces all information previously supplied. is a registered trademark of jiangsu jieji e microelectronics co.,ltd. copyright ? 201 5 jiangsu jiejie microelectronics co.,ltd. printed all rights reserved. fig.3: surge peak on-state current versus number of cycles fig.6: relative variations of gate trigger current, holding current and latching current versus junction temperature fig.1 maximum power dissipation versus rms on-state current fig.5: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms, and corresponging value of i t (di/dt < 50a/ s) fig.4: on-state characteristics (maximum values) fig.2: rms on-state current versus case temperature i t(rms) (a) p(w) 0 10 20 30 40 50 0 30 i t(rms) (a) tc ( ) 0 10 20 30 0 25 50 75 100 125 1 10 100 1000 number of cycles 0 100 200 300 400 i tsm (a) i tm (a) v tm (v) 0 1 2 3 4 5 1 10 100 tj=25 tj=125 tp(ms) 0.01 0.1 1 10 20 1000 i tsm (a), i t (a s) -40 -20 0 20 40 60 80 100 120 140 i gt ,i h ,i l (tj) /i gt ,i h ,i l (tj=25 ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 40 500 2 2 2 tj ( ) 50 60 50 60 i h &i l i gt to-3p(ins) 400 10 20 40 10000 di/dt t=20ms one cycle =180 i tsm i t 2 tg-c/ to-247
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